DMN3135LVT
2.4
10
2
8
1.6
6
T A = 25 ° C
1.2
4
0.8
2
0.4
0
-50
-25
0 25 50 75 100 125 150
0
0
0.2
0.4
0.6
0.8
1
1.2
T A , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
1000
f = 1MHz
10000
V SD , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
C ISS
1000
T A =150°C
T A =125°C
100
100
C RSS
C OSS
10
1
T A =85°C
T A =-55°C
T A =25°C
10
0
5
10
15
20
25
30
0.1
0
2
4
6 8 10 12 14 16 18 20 22 24 26 28 30
10
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
V DS , DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
100
8
6
4
2
80
60
40
20
Single Pulse
R θ JA = 157 ° C/W
R θ JA (t) = R θ JA * r (t)
T J -T A = P * R θ JA(t)
0
0
2 4 6 8
Q g , TOTAL GATE CHARGE (nC)
10
0
0.00001 0.001 0.1 10 1,000
t1, Pulse Duration Time (sec)
Fig. 12 Single Pulse Maximum Power Dissipation
Fig. 11 Gate-Charge Characteristics
DMN3135LVT
Document number: DS35408 Rev. 6 - 2
4 of 6
www.diodes.com
May 2012
? Diodes Incorporated
相关PDF资料
DMN3150L-7 MOSFET N-CH 28V 3.2A SOT23-3
DMN3150LW-7 MOSFET N-CH 28V 1.6A SC70-3
DMN3200U-7 MOSFET N-CH 30V 2.2A SOT23-3
DMN32D2LDF-7 MOSFET 2N-CH 30V 400MA SOT353
DMN32D2LFB4-7 MOSFET N-CH 30V 300MA 3-DFN
DMN32D2LV-7 MOSFET N-CH DUAL 30V SOT-563
DMN3300U-7 MOSFET N-CH 30V 2A SOT23-3
DMN3404L-7 MOSFET N-CH 30V 5.8A SOT-23
相关代理商/技术参数
DMN3150L 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3150L-7 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3150LW 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3150LW-7 功能描述:MOSFET 0.35W 28V 1.6A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3200U 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3200U-7 功能描述:MOSFET 650mW 30Vdss RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN32D2LDF 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMMON SOURCE DUAL N-CHANNEL
DMN32D2LDF-7 功能描述:MOSFET 350mw 30V DUAL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube